This paper describes a low-noise distributed amplifier that uses cascode-connected bipolar junction transistor (BJT) terminal circuit. This amplifier has a lower NF compared with a ...

Mumbai's CAAR classifies Insulated Gate Bipolar Transistors (IGBTs) under CTH 8541.29.00, citing HSN notes. The ruling impacts EV component importers.

At the very least, the transistor could revolutionize communications and radio signals, something that would give the US Army an advantage if the invention was kept a secret from other countries.

This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and ...