Samsung Electronics plans to convert part of its 3D NAND production at its Xi'an plant in China to the company's most ...
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Samsung prepares to unveil 10th generation V-NAND with 400+ layers — ready to power future PCIe 5.0 and 6.0 SSDsThe new 4xx-layer 3D NAND devices will have an interface speed of 5.6 GT/s and will be presented at the upcoming International Solid-State Circuits Conference (ISSCC). Samsung's ultra-fast 10th ...
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