In this special Wine Down Friday episode at PCIM, Maurizio Di Paolo Emilio sits down with Peter Wawer, division president of green industrial power at Infineon Technologies, to reflect on his career ...

Mike Engelhardt started out simulating particle collisions at a physical lab and later wrote a simulator for a scanning electron microscope. For those who may not know, Mike Engelhardt is the author ...

Fusion technology traction inverters combine silicon and SiC power switches to balance efficiency, cost, and sustainability. Some silicon can be added to SiC to increase the maximum performance of a ...

Resonant gate drivers are based on creating a current source to drive the power device. An optimized gate drive is especially important for driving Wide Band Gap (WBG) power devices such as those ...

Nisshinbo Micro Devices’ solutions for op-amps and LDOs play a critical role in ensuring the stability of automotive electronics. The automotive industry is experiencing a rapid evolution, driven by ...

CoolSiC™ JFETs ensure efficient, reliable performance with strong short-circuit tolerance, thermal stability in linear mode, and precise overvoltage control. To support the evolution of ...

The Netherlands is working on new HVDC projects, while TenneT is developing new management techniques to overcome grid congestion. The electric grid uses electrical substations to transfer energy from ...

The first products featuring the new technology will be 1200 V devices in Infineon’s ID-PAK package, designed for automotive traction inverters and integrating the benefits of trench technology with ...

The new GaN power device is engineered to replace legacy low-voltage silicon MOSFETs in demanding power applications. Efficient Power Conversion (EPC) has introduced the EPC2366, a 40 V, 0.8 mΩ device ...

Answering the increasing power requirements of AI will require ongoing innovation in silicon power MOSFET technology. Energy usage has always been a concern for data center operators, but the ...

Wide-creepage package enables high-performance demonstration of InnoSwitch™3-AQ in new reference designs. Power Integrations has introduced five new reference designs optimized for 800 V automotive ...

The AEC-Q101-qualified 1200 V SiC MOSFETs in D2PAK-7 packaging combine excellent thermal stability and easy assembly. Nexperia has introduced a new lineup of highly efficient and rugged ...