Digi Times1d
Samsung reportedly to upgrade China NAND production to 286 layers
Samsung Electronics plans to convert part of its 3D NAND production at its Xi'an plant in China to the company's most ...
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Samsung's archrival becomes first chipmaker to launch 300+ layer TLC NAND flash memory; SK Hynix's 321-layer 1-terabit TLC paves the way for more affordable 100TB+ SSDs
Samsung is reportedly working on a 400-layer NAND flash chip, which it plans to release by 2026. The company’s roadmap includes developing bonding vertical NAND (BV NAND) technology, which will ...
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Samsung prepares to unveil 10th generation V-NAND with 400+ layers — ready to power future PCIe 5.0 and 6.0 SSDs
The new 4xx-layer 3D NAND devices will have an interface speed of 5.6 GT/s and will be presented at the upcoming International Solid-State Circuits Conference (ISSCC). Samsung's ultra-fast 10th ...